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| MITSUBISHI TRANSISTOR MODULES QM200HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM200HA-2H * * * * * IC Collector current ........................ 200A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 93 E 16 BX 9 9 B 16 B (13) M4 (21) M6 41.5 48 62 3 6.5 C E BX C 4 20 20 4 (29) 6.5 M6 25.5 LABEL 36 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200HA-2H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 200 200 1560 10 2000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 460 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm N*m kg*cm N*m kg*cm g Mounting screw M6 -- Mounting torque B(E) terminal screw M4 BX terminal screw M4 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=200A, IB=4A -IC=200A (diode forward voltage) IC=200A, VCE=2.8V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=600V, IC=200A, IB1=-IB2=4A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 800 2.5 3.5 1.8 -- 3.0 15 3.0 0.08 0.35 0.04 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200HA-2H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 400 COLLECTOR CURRENT IC (A) 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 VCE=5.0V VCE=2.8V DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) IB=4.0A IB=2.0A 240 IB=1.0A 160 IB=0.4A IB=0.2A 80 Tj=25C 0 0 1 2 3 4 5 VCE (V) DC CURRENT GAIN hFE 320 Tj=25C Tj=125C 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.8 2.2 2.6 3.0 3.4 VBE (V) 3.8 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 BASE CURRENT IB (A) VCE=2.8V Tj=25C SATURATION VOLTAGE VBE(sat) VCE(sat) IB=4A Tj=25C Tj=125C 10 -1 10 0 2 3 4 5 710 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) BASE-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 IC=300A SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 VCC=600V 5 IB1=-IB2=4A Tj=25C 3 Tj=125C 2 10 1 7 5 3 2 ts 3 SWITCHING TIME ton, ts, tf (s) 2 IC=50A IC=200A IC=100A Tj=25C Tj=125C 1 0 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 BASE CURRENT IB (A) tf 10 0 7 5 ton 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200HA-2H HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10-1 REVERSE BIAS SAFE OPERATING AREA 400 COLLECTOR CURRENT IC (A) ts, tf (s) VCC=600V IB1=4A IC=200A IB2= -4A 300 IB2=-10A SWITCHING TIME ts 200 Tj=125C 100 tf Tj=25C Tj=125C 2 3 4 5 7 10 0 2 3 4 5 7 10 1 0 0 200 400 600 800 1000 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 0 2 3 4 5 710 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 10 100 90 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) 100S 1m 50S DC S DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 0.10 0.08 S 80 100 120 140 160 CASE TEMPERATURE TC (C) 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Zth (j-c) (C/ W) 0.06 0.04 0.02 0 10 -3 2 3 4 5 7 10 -22 3 4 5 710 -1 2 3 4 5 7 10 0 10 0 0 Tj=25C Tj=125C 0.4 0.8 1.2 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200HA-2H HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 2000 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 VCC=600V 5 IB1=-IB2=4A Tj=25C 3 Tj=125C 2 Irr (A), Qrr (c) 10 2 7 5 3 2 Qrr 10 2 1600 Irr 10 1 trr (s) Feb.1999 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 1 10 0 7 5 trr 3 2 10 -1 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 7 0.40 0.32 Zth (j-c) (C/ W) 0.24 0.16 0.08 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) |
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